Redistribution of implanted dopants in GaN

Donor (S, Se, and Te) and acceptor (Mg, Be, and C) dopants have been implan ted into GaN at doses of 3-5 x 10(14) cm(-2) and annealed at temperatures u p to 1450 degrees C. No redistribution of any of the elements is detectable by secondary ion mass spectrometry, except for Be, which displays behavior consistent with damage-assisted diffusion at 900 degrees C. At higher temp eratures, there is no further movement of the Be, for peak annealing temper ature durations of 10 s. Effective diffusivities are less than or equal to 2 x 10(-13) cm(2).s(-1) at 1450 degrees C for each of the dopants in GaN.