Annealing studies of photoluminescence spectra from multiple Er3+ centers in Er-implanted GaN

A study of selectively excited photoluminescence (PL) at similar to 6K in E r-implanted GaN as a function of annealing temperature (400-1000 degrees C) has detected nine different Er3+ centers with distinct; similar to 1540 nm I-4(13/2) --> I-4(15/2) Er3+ PL spectra and different activation temperatu res. However, most of the optically active implanted Er atoms are incorpora ted at annealing temperatures as low as 400 degrees C on a single type of c enter for which PL can only be excited efficiently by direct intra-4f shell absorption and is not strongly pumped by either above-gap or broad-band be low-gap absorption. This strongly suggests that this high-concentration Er3 + center is an isolated, isoelectronic center consistent with Er3+ substitu ted on a Ga site. In contrast, a very small fraction of the Er atoms that f orm a variety of Er-defect/impurity complexes dominate the Er3+ emission sp ectra excited by above-gap and broad-band below-gap absorption because of t heir larger cross sections for both carrier capture and optical absorption.