Donor ion-implantation doping into SiC

In this paper, dopant electrical activation and dopant thermal stability re sults of As and Sb-implanted GH-Sie epitaxial layers and N ion implantation s into bulk semi-insulating (SI) 4H-SiC are presented. In addition, empiric al formulas for the first four statistical moments (range, straggle, skewme ss, and kurtosis) of the implant depth distributions of N and P ion implant s are developed in the energy range of 50 keV to 4 MeV. The nitrogen ion-im plantations in SI 4H-SiC yield an acceptable (27%) room-temperature electri cal activation (ratio of measured sheet-carrier concentration at room-tempe rature to the implant dose) for N concentrations of 2 x 10(19) cm(-3). The As and Sb implants out-diffuse during annealing and yield low (<20%) room-t emperature electrical activation for implant concentrations of 10(19) cm(-3 ). The N and P implant depth distributions in SiC can be simulated using th e Pearson IV distribution function and the range statistics provided by the empirical formulas.