The local structure of porous silicon has been studied exciting its optical
luminescence by X-rays (XEOL). The photoluminescence yield and the total e
lectron yield (TEY), recorded simultaneously as a function of the X-ray ene
rgy at the Si K edge, give rise to the extended X-ray absorption fine struc
tures (EXAFS). Analysis of EXAFS data confirms that the optical luminescenc
e of porous Si originates from the nanocrystalline cores and shows that XEO
L-EXAFS and TEY-EXAFS are sensitive to different Si local environment. It c
an be assumed that XEOL-EXAFS is related only to the light emitting sites w
hile TEY-EXAFS is sampling both luminescent and non-luminescent Si sites. (
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