Effect of oxygen implantation on ionoluminescence of porous silicon

We report on ionoluminescence investigations of porous Si prepared from the p(+)-type Si, which exhibited, after prolonged ambient air exposure, moder ate photon emission with a maximum in the red-orange region. In an attempt to activate a shorter wavelength emission, the samples were implanted with 225 keV O+ ions at the dose of I x 10(17) cm(-2) The strong blue band at 2. 7 eV, well known in silica, has emerged in the ionoluminescence spectra fol lowing the oxygen implantation. The results of the comparative ionoluminesc ence experiments, performed on both porous Si and two forms of silica, show the important role of SiO2 defect-related states in ion-induced optical em ission from porous Si. (C) 1999 Elsevier Science B.V. All rights reserved.