a-SiOx : H thin film light emitting devices for Si-based optoelectronics

Electrical and optoelectronic characterization of p-i-n devices based on a- SiOx: H thin film alloys is presented. It is shown that near infrared elect roluminescence can be obtained for applied fields higher than a typical thr eshold depending on the p/i and n/i interface structure. Electroluminescenc e (EL) intensity under AC excitation is independent of frequency up to 20 k Hz and exhibits rise and decay times of about 10 mu s. Optical properties o f a-SiOx: H materials allow the integration of LED devices and optical wave guides, which can be coupled to planar silicon detectors for obtaining Si-b ased optoelectronic circuits. (C) 1999 Elsevier Science B.V. All rights res erved.