XPS investigation of a-Si : H thin films after light soaking

Amorphous hydrogenated silicon thin films prepared by homogeneous chemical vapour deposition have been studied. The Si2p, O1s and C1s electron spectra have been recorded after different light soaking times using repeated 100 mW/cm(2) white light illumination and X-ray photoelectron spectroscopy (XPS ) measurements. The change of the position and intensity of the Si2p peak h as been observed after light soaking and is explained by the transformation of the Si-H bonds. The correlation between the micropore density in a-Si : H film and the binding energy of Si2p electrons is demonstrated. (C) 1999 E lsevier Science B.V. All rights reserved.