Photoluminescence and X-ray characterisation of Si/Si1-xGex multiple quantum wells

We present an experimental approach to correlate optical and structural pro perties of Si/Si1-xGex multiple quantum wells as determined by photolumines cence (PL) and X-ray diffraction, respectively. The optical properties of t he quantum wells were characterised by studying the dependence of luminesce nce on temperature and excitation density. An enhanced PL yield and an incr eased quenching temperature were observed for a sample grown at 650 degrees C as compared to one grown at 600 degrees C. Pronounced interdiffusion acr oss the multiple quantum well interfaces as well as significant lattice dis tortions within the Sice layers have been observed. (C) 1999 Elsevier Scien ce B.V. All rights reserved.