High-quality YBa2Cu3O7-x films with CeO2/YSZ buffer layers on 2-inch Si wafers deposited by pulsed laser

The pulsed laser deposition (PLD) process is shown for in situ reproducibly fabricating YBa2Cu3O7-x (YBCO) superconducting films with yttrium-stabiliz ed zirconia (YSZ) and CeO2 buffer layers, nonsuperconducting crystalline YB a2Cu3O7-x (YBCO*) passivation layer, and silver contact film on 2-inch sili con wafers. Variations of less than +/-7% in film thickness have been obtai ned for this multilayer growth over the whole wafer. The YBCO films on 2-in ch silicon wafers have homogeneous superconducting properties with zero res istance temperature T-c0 from 88.4 K to 88.9 K and critical current density J(c) at 77 K and zero field from 2.5 x 10(6) to 7 x 10(6) A/cm(2). The YSZ , CeO2 and YBCO layers grow epitaxially on silicon wafers. Full widths at h alf maximum (FWHMs) of (113) reflections of 40 nm thick YBCO layer from phi -scan patterns are only 1.71 degrees and 1.85 degrees corresponding to the center and edge of the wafer, respectively. These results are very promisin g for developing high-quality high-T-c superconducting devices on large-are a silicon wafers.