A model for current-voltage oscillations at the silicon electrode and comparison with experimental results

The first consistent and complete model of current oscillations at the Si e lectrode is presented. The only basic assumption needed is an ionic breakth rough mechanism which is postulated to occur in thin oxides under oxidizing electrode conditions, leading to an enhanced and localized ion transport t o the Si-SiO2 interface. Choosing reasonable values for three corresponding physical parameters and using a Monte Carlo simulation technique, first-pr inciple calculations yield quantitative data in excellent agreement with nu merous experimental results, including the value of the current, surface ro ughness, the average oxide thickness, and the capacitance as a function of the phase of oscillations, and the frequency of the oscillations as a funct ion of applied voltage, current density, etching rate or HF concentration, and temperature. (C) 1999 The Electrochemical Society. S0013-4651(98)05-017 -4. All rights reserved.