D. Bertone et al., Selective growth of semi-insulating InP around masked nonplanar structuresusing low-pressure pulsed metallorganic epitaxy, J ELCHEM SO, 146(3), 1999, pp. 1167-1171
Selective growth of Fe-doped InP around masked, nonplanar structures has be
en studied using low-pressure pulsed metallorganic epitaxy (PME). The struc
tures, which are etched by a combination of reactive ion etching and wet ch
emical etching, have a mask overhang length of less than 0.5 mu m and a mes
a height of 2-3 mu m. We show that it is possible to obtain a planar growth
surface on a "nonre-entrant" etched profile using low-pressure PME, at a g
rowth temperature of 630 degrees C. The growth behavior has been influenced
by the stripe orientations, the etched profiles, and the growth temperatur
e. A plane overshooting phenomenon is observed and discussed in terms of a
surface migration mechanism. This new growth technique has been used in dev
ice fabrication. (C) Electrochemical Society. S0013-4651(98)02-046-1. All r
ights reserved.