We report the thin him preparation of CeSb by means of molecular beam epita
xy (MBE) onto sapphire (11 (2) over bar 0) substrates. Above a substrate te
mperature of about 300 degrees C CeSb crystallizes in (001) orientation . T
he growth mode of the films changes from a fiber textured to an epitaxial m
ode for deposition temperatures above 900 degrees C. Although the specific
resistivity is enhanced the characteristic energy scales, like the Kondo te
mperature T-K and the magnetic ordering temperature T-N, are not changed si
gnificantly (C) 1999 Elsevier Science B.V. All rights reserved.