Thin film preparation of the low charge carrier density Kondo system CeSb

We report the thin him preparation of CeSb by means of molecular beam epita xy (MBE) onto sapphire (11 (2) over bar 0) substrates. Above a substrate te mperature of about 300 degrees C CeSb crystallizes in (001) orientation . T he growth mode of the films changes from a fiber textured to an epitaxial m ode for deposition temperatures above 900 degrees C. Although the specific resistivity is enhanced the characteristic energy scales, like the Kondo te mperature T-K and the magnetic ordering temperature T-N, are not changed si gnificantly (C) 1999 Elsevier Science B.V. All rights reserved.