The energy gap of SmB6 at low temperatures

Authors
Gabani, S Flachbart, K Farkasovsky, P Pavlik, V Bat'ko, I Herrmannsdorfer, T Konovalova, E Paderno, Y
Citation
S. Gabani et al., The energy gap of SmB6 at low temperatures, PHYSICA B, 261, 1999, pp. 345-346
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
261
Year of publication
1999
Pages
345 - 346
Database
ISI
SICI code
0921-4526(199901)261:<345:TEGOSA>2.0.ZU;2-G
Abstract
We have studied the energy gap of the intermediate valent small-gap semicon ductor SmB6 by means of electrical resistivity measurements. The data recei ved from the investigation of three single-crystalline samples have shown t hat at lowest temperatures the resistivity exhibits an activated behaviour with an energy gap of a few mK. The structure and origin of the in-gap stat es are discussed. (C) 1999 Elsevier Science B.V. All rights reserved.