Tunneling into epitaxial UPd2Al3 thin films

Authors
Jourdan, M Huth, M Haibach, P Adrian, H
Citation
M. Jourdan et al., Tunneling into epitaxial UPd2Al3 thin films, PHYSICA B, 261, 1999, pp. 621-622
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
261
Year of publication
1999
Pages
621 - 622
Database
ISI
SICI code
0921-4526(199901)261:<621:TIEUTF>2.0.ZU;2-G
Abstract
UPd2Al3-AIO(x)-Pb Giaever-type tunneling junctions were prepared employing an in vacuo process. The high junction quality is evident by the observatio n of the well-known superconducting density of states of the Pb counter ele ctrode. For H-c2(Pb) < H << H-c2(UPd2Al3) an energy gap for UPd2Al3 along t he c-axis is well-resolved This represents the first direct observation of the superconducting density of states of a heavy-fermion-compound by spectr oscopic means. (C) 1999 Elsevier Science B.V. All rights reserved.