We have carried out the flux dow experiments for two single crystal samples
with the residual resistivity ratio RRR = 240 and 12 which differ highly i
n quality. The peak structure, which is observed in the vicinity of H-c2, i
s dominant for the RRR = 12 sample, while it is slightly observed for the R
RR = 240 sample. The flux flow, however, starts at a low field for the RRR
= 12 sample, compared to that for the RRR = 240 sample. It means that a pin
ning force for the RRR = 12 sample is smaller than that for the RRR = 240 s
ample. These characteristic features might be closely related to layered de
fects and Ru-vacancies which exist heavily in the RRR = 12 sample. (C) 1999
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