TRANSMISSION-ION-CHANNELING STUDIES OF THE SILICON(111) MONOHYDRIDE SURFACE

Transmission ion channeling was used to examine the atomic position of deuterium on the silicon (111) monohydride surface. A 2-MeV He-4(+)-i on beam was used to elastically recoil deuterium from the beam-exit su rface of a thin silicon crystal. The yield of recoiled deuterium was m easured versus angle between the analysis beam and the channeling axis near the [111], [110], and [100] axes. The location of the surface de uterium relative to the silicon lattice vias examined by comparing the measured yields with computer simulations of ion channeling. Channeli ng measurements were consistent with approximately half of the deuteri um occupying a site close to the site predicted by nb initio calculati ons of the structure for the Si(111) 1x1 monohydride surface, with the remaining deuterium being disordered or displaced from the predicted site.