Tunneling spectroscopy on the correlation effects in FeSi

Citation
M. Fath et al., Tunneling spectroscopy on the correlation effects in FeSi, PHYSICA B, 261, 1999, pp. 860-861
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA B
ISSN journal
09214526 → ACNP
Volume
261
Year of publication
1999
Pages
860 - 861
Database
ISI
SICI code
0921-4526(199901)261:<860:TSOTCE>2.0.ZU;2-N
Abstract
We report for the first time on temperature-dependent spectroscopy of charg e excitations in FeSi single crystals probed with a low-temperature STM bet ween 4 and 300 K. Below approximate to 200 K, two peaks start to emerge in the differential conductance (dI/dV) on either side of the Fermi level, whi ch grow with decreasing temperature and are separated by a (pseudo-)gap of approximate to 50 meV. We ascribe this change in the tunneling spectra to t he formation of quasiparticle density of states caused by d-electron correl ations. We find good agreement with photoemission spectroscopy since both m ethods are sensitive to the correlated d-electron density of states (DOS). Our results are also consistent with optical reflectivity data and Raman sp ectroscopy which, in contrast, are sensitive to the conduction (c) electron DOS. (C) 1999 Elsevier Science B.V. All rights reserved.