The heavy-fermion semiconductors have a low-temperature insulating state th
at is characterized by an anomalously small energy gap, varying between 10
and 100 K. The small gap is a many-body renormalized hybridization gap. The
dispersion and temperature dependence of the electronic spectral density o
f states is calculated, using the large U-ff limit of the N-fold degenerate
Anderson lattice model at half-filling, together with a slave boson 1/N ex
pansion. The effect of emission and absorption of the slave boson fluctuati
ons is to produce a dispersive asymmetric f(0) peak, and a thermally activa
ted broadening of the f quasi-particle peak in A(k,omega). As the temperatu
re is reduced the structure in the vicinity of the Fermi-energy sharpens up
. The theory is compared to experiments on the materials FeSi and Ce3Bi4Pt3
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