The critical temperature T-c attainable with BiSrCaCuO high-temperature sup
erconductors depends on the number of CuO2 layers per unit cell (n = 1-4).
Here se give an overview of our results achieved so far on single crystalli
ne material with n = 1 (T-c = 29 K at optimal doping) and n = 3 (T-c = 108
K) such layers in comparison to the extensively studied n = 3 compound (T-c
= 89 K). The investigations involve highly resolved photoemission spectra
along major symmetry lines and polarization studies. The polarization studi
es were performed at a crossed undulator synchrotron beamline enabling an i
n situ variation of light polarization without moving the sample. (C) 1999
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