Surface quantum wells in hydrogen implanted ZnO

Low energy hydrogen ion implantation in ZnO creates an accumulation layer n ear the surface, giving rise to a quantum well. The corresponding self-cons istent Hartree problem is solved by taking into account the donor distribut ion resulting from the implantation process. The values of the surface pote ntial as a function of repelled away electron concentration are derived. Th e resulting data are compared with experimental values obtained from space- charge capacitance measurements. A comparative study between the semi-class ical and self-consistent quantum treatments is presented.