Design of ion-implanted MOSFET's with very small physical dimensions (Reprinted from IEEE Journal of Solid-State Circuits, vol 9, pg 256-268, 1974)

This paper considers the design, fabrication, and characterization of very small MOSFET switching devices suitable for digital integrated circuits usi ng dimensions of the order of 1 mu. Scaling relationships are presented whi ch show how a conventional MOSFET can be reduced in size. An improved small device structure is presented that uses ion implantation to provide shallo w soul-ce and dr ain regions and a nonuniform substrate doping profile. One -dimensional models are used to predict the substrate doping profile and th e corresponding threshold voltage versus source voltage characteristic. A t wo-dimensional current transport model is used to pr-edict the relative deg ree of short-channel effects for different device parameter combinations. P olysilicon-gate MOSFET's with channel lengths as short as 0.5 mu were fabri cated, and the device characteristics measured and compared with predicted values. The performance improvement expected from using these very small de vices in highly miniaturized integrated circuits is projected.