Electrochemical defect-mediated thin-film growth

Citation
K. Sieradzki et al., Electrochemical defect-mediated thin-film growth, SCIENCE, 284(5411), 1999, pp. 138-141
Citations number
29
Categorie Soggetti
Multidisciplinary,Multidisciplinary,Multidisciplinary
Journal title
SCIENCE
ISSN journal
00368075 → ACNP
Volume
284
Issue
5411
Year of publication
1999
Pages
138 - 141
Database
ISI
SICI code
0036-8075(19990402)284:5411<138:EDTG>2.0.ZU;2-9
Abstract
An electrodeposition technique is described that produces atomically flat e pitaxial metal overlayers of quality similar to that obtained by ultrahigh vacuum techniques at elevated temperature. In this approach. a metal of int erest such as silver is co-deposited with a reversibly deposited mediator m etal. The mediator is periodically deposited and stripped from the surface, and this serves to significantly increase the density of two-dimensional i slands of silver atoms, promoting a layer-by-layer thin-film growth mode. I n situ scanning tunneling microscopy was used to demonstrate the growth pro cess for the heteroepitaxial system silver/gold (111) with either Lead or c opper as the mediator.