Microstructure analyses of the titanium films formed by the ionized sputtering process

We investigated the microstructure of the Ti-films formed on the (001) sing le crystal silicon wafers through the ionized sputtering process, and compa red the results with those obtained by collimated sputtering. We found that the Ti-films created by ionized sputtering process without the substrate b ias show less strong (002) textures than collimated sputtering. The Ti-film s created by the ionized sputtering process with the substrate bias did not show any observable strong textures. We also found that the ionized sputte ring processed Ti-films show about 4 nm thick amorphous Ti-Si interlayer, w hich is much thicker than that of the collimated sputtering process. The mo difications of the microstructure of Ti-films are attributed to the ion bom bardments during the ionized sputtering deposition process. (C) 1999 Elsevi er Science S.A. All rights reserved.