Chemical bath deposition of indium sulphide thin films: preparation and characterization

Indium sulphide (In2S3) thin films have been successfully deposited on diff erent substrates under varying deposition conditions using chemical bath de position technique. The deposition mechanism of In2S3 thin films from thioa cetamide deposition bath has been proposed. Films have been characterized w ith respect to their crystalline structure, composition, optical and electr ical properties by means of X-ray diffraction. TEM. EDAX, optical absorptio n, TRMC (time resolved microwave conductivity) and RBS. Films on glass subs trates were amorphous and on FTO (flourine doped tin oxide coated) glass su bstrates were polycrystalline (is an element of phase). The optical band ga p of In2S3 thin him was estimated to be 2.75 eV. The as-deposited films wer e photoactive as evidenced by TRMC studies. The presence of oxygen in the f ilm was detected by RBS analysis. (C) 1999 Elsevier Science S.A. All rights reserved.