Growth and characterization of AP-MOCVD iron doped titanium dioxide thin films

Atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) was used to prepare iron doped titanium dioxide thin films. Thin films, betwee n 40 and 150 nm thick, were deposited on Si, SiO2 and Al2O3 substrates usin g titanium tetra isopropoxide and ferrocene as metal organic precursors. Ti O2 iron doping was achieved in the range of 1-4 at.%. The film morphology a nd thickness, polycrystalline texture and doping content were studied using respectively scanning electron microscopy (SEM), X-ray diffraction (XRD) a nd X-ray photoelectron spectroscopy (XPS), The influence of growth temperat ure, deposition time, substrate type and dopant partial pressure were studi ed. Electrical characterizations of the films were also performed. (C) 1999 Elsevier Science S.A. All rights reserved.