STRONG VISIBLE PHOTOLUMINESCENCE FROM AMORPHOUS-SILICON GRAINS IN A-SIOX-H FILMS

Authors
MA ZX LIAO XB HE J YUE GZ WANG YQ CHENG WC KONG GL
Citation
Zx. Ma et al., STRONG VISIBLE PHOTOLUMINESCENCE FROM AMORPHOUS-SILICON GRAINS IN A-SIOX-H FILMS, Solid state communications, 104(10), 1997, pp. 587-591
Citations number
16
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
104
Issue
10
Year of publication
1997
Pages
587 - 591
Database
ISI
SICI code
0038-1098(1997)104:10<587:SVPFAG>2.0.ZU;2-7
Abstract
Two strong luminescence bands were observed from a-SiOx:H in the spect ral range of 550-900 nm at room temperature. One is a main broad peak which blueshifts with oxygen content and the other is a shoulder fixed at about 835 nm. In conjunction with TR and micro-Raman spectra, we h ave proposed that the main band may originate from the amorphous silic on grains embedded in SiOx network, while the shoulder might be due to some defects induced by excess-silicon in these films. (C) 1997 Elsev ier Science Ltd.