TEMPERATURE-DEPENDENCE OF VISIBLE PHOTOLUMINESCENCE FROM PECVD NANOCRYSTALLITES EMBEDDED IN AMORPHOUS-SILICON FILMS

Citation
S. Tong et al., TEMPERATURE-DEPENDENCE OF VISIBLE PHOTOLUMINESCENCE FROM PECVD NANOCRYSTALLITES EMBEDDED IN AMORPHOUS-SILICON FILMS, Solid state communications, 104(10), 1997, pp. 603-607
Citations number
26
Journal title
ISSN journal
00381098
Volume
104
Issue
10
Year of publication
1997
Pages
603 - 607
Database
ISI
SICI code
0038-1098(1997)104:10<603:TOVPFP>2.0.ZU;2-N
Abstract
The temperature dependence of visible range photoluminescence (PL) pro perties of nanocrystallites embedded in silicon films deposited at the substrate temperature T-s= 50-150 degrees C by PECVD method was studi ed. It was found that there are many differences between them and that of the near-infrared range PL in ordinary a-Si:H films. Combining wit h the results of photo-absorption studies of these nanocrystalline sam ples, we discussed the mechanism of their visible range FL. We suggest that the light excitation occurs in both the nanocrystallites core an d their surface regions; however, the radiative recombination can only occur between the electrons and holes in the localized band tail stat es of the crystallite surface regions, which are more disordered than ordinary a-Si:H with their defect states extending more deeply into th e band gap. (C) 1997 Elsevier Science Ltd.