INTRASUBBAND ELECTRON-PHONON SCATTERING IN DOPED THIN-LAYER INSERTED QUANTUM-WELL

The intrasubband electron-optical-phonon scattering is studied for a S i-doped thin-layer inserted GaAlAs quantum well. Including the externa l electric field in consideration, we solved the Schrodinger equation and Poisson equation self-consistently in order to determine the energ y levels and subband wave functions of the electron states and employe d the dielectric continuum model and microscopic lattice-dynamic model to obtain the interface phonon and confine phonon spectra. Our result s show that the intrasubband scattering can be strongly modulated by c hanging the external field and adjusting the well structure parameters . This may benefit some device design and applications. (C) 1997 Elsev ier Science Ltd.