The influence of growth conditions and surface polarity upon the morph
ology of (0001) GaN surfaces is studied from first principles. The cha
rge transfer between the Ga and N atoms in GaN and the very large elec
tronegativity of nitrogen are found to play decisive roles in determin
ing the stable reconstructions. Further, hydrogen stabilizes the ideal
ly cleaved surface irrespective of polarity. For both polarities, adso
rption of 3/4 of a monolayer of hydrogen results in a very stable surf
ace with a 2x2 symmetry.