Re. Pritchard et al., INTERACTIONS OF HYDROGEN MOLECULES WITH BOND-CENTERED INTERSTITIAL OXYGEN AND ANOTHER DEFECT CENTER IN SILICON, Physical review. B, Condensed matter, 56(20), 1997, pp. 13118-13125
Infrared spectra obtained from Czochralski (CZ) silicon heated in the
range 1100 less than or equal to T less than or equal to 1300 degrees
C in H-2, D-2, or mixtures of the two gases, show vibrational absorpti
on at 1075 cm(-1) due to perturbed bond-centered interstitial oxygen a
toms O-i. Deconvolutions of these absorption profiles imply that the o
bserved perturbations to the O-i atom are due to adjacent defects inco
rporating two H atoms. This interpretation is confirmed by detection o
f modes nu(1) (nu(1HH),nu(1HD),nu(1DD)) with nu(1HH)=3789 cm(-1) and n
u(2) (nu(2HH),nu(2HD),nu(2DD)) with nu(2HH)=3731 cm(-1), that both cor
relate in strength with that of the 1075 cm(-1) absorption. A third se
t of modes nu(3) (nu(3HH),nu(3HD),nu(3DD)), with nu(3HH)=3618 cm(-1) d
etected in heat-treated CZ and float zone silicon and not related to t
he absorption at 1075 cm(-1), must be due to H-H pair defects trapped
at an unknown impurity or lattice defect. The frequencies of the nu(1H
D), nu(2HD), and nu(3HD) modes imply that the three defects are H-2 mo
lecules with weakened bonds and small dipole moments resulting from in
teractions with either adjacent oxygen atoms (nu(1), nu(2)) or a secon
d type of trap (nu(3)). Annealing treatments imply that isolated O-i-H
-2 complexes can dissociate for T greater than or equal to 70 degrees
C allowing interstitial H-2 molecules to diffuse away but they can be
retrapped during a subsequent anneal at T less than or equal to 50 deg
rees C.