SURFACE-RECONSTRUCTION-INDUCED GEOMETRIES OF SI CLUSTERS

Authors
Citation
E. Kaxiras, SURFACE-RECONSTRUCTION-INDUCED GEOMETRIES OF SI CLUSTERS, Physical review. B, Condensed matter, 56(20), 1997, pp. 13455-13463
Citations number
93
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
56
Issue
20
Year of publication
1997
Pages
13455 - 13463
Database
ISI
SICI code
0163-1829(1997)56:20<13455:SGOSC>2.0.ZU;2-W
Abstract
We discuss a generalization of the surface-reconstruction arguments fo r the structure of intermediate-size Si clusters, which leads to model geometries for the sizes 33, 39 (two isomers), 45 (two isomers), 49 ( two isomers), 57, and 61 (two isomers). The common feature in all thes e models is a structure that closely resembles the most stable reconst ruction of Si surfaces, surrounding a core of bulklike tetrahedrally b onded atoms. We investigate the energetics and the electronic structur e of these models through first-principles density-functional theory c alculations. These models may be useful in understanding experimental results on the reactivity of Si clusters and their shape as inferred f rom mobility measurements.