TEMPERATURE-DEPENDENT GROWTH AND STRUCTURE OF CR DEPOSITED ON CO(0001)

Authors
SCHEURER F OHRESSER P BULOU H DEVILLE JP CARRIERE B DOBROIU A
Citation
F. Scheurer et al., TEMPERATURE-DEPENDENT GROWTH AND STRUCTURE OF CR DEPOSITED ON CO(0001), Physical review. B, Condensed matter, 56(20), 1997, pp. 13490-13495
Citations number
27
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
56
Issue
20
Year of publication
1997
Pages
13490 - 13495
Database
ISI
SICI code
0163-1829(1997)56:20<13490:TGASOC>2.0.ZU;2-C
Abstract
The growth and structure of ultrathin Cr films deposited on a Co(0001) single crystal are investigated for substrate temperatures ranging fr om 300 to 500 K by means of Auger electron spectroscopy, low-energy el ectron diffraction, and photoemission. Below 410 K, the interface is s harp and the Cr layers are in a Nishiyama-Wassermann-type epitaxy. Abo ve 410 K, Cr grows pseudomorphically up to about one monolayer and the n the structure turns to a Kurdjumov-Sachs orientation. For a growth t emperature below 440 K uniaxial disorder appears when increasing the f ilm thickness.