Me. Daniels et al., THE EFFECT OF QUANTUM-WELLS ON THE MOBILITY OF ELECTRONS IN VERTICAL TRANSPORT, Semiconductor science and technology, 12(4), 1997, pp. 375-379
The mobility of electrons drifting in AlGaAs across GaAs quantum wells
has been measured using the geometrical magnetoresistance (GMR) techn
ique over the temperature range 77 to 300 K. The mobility is shown to
be an oscillating function of well width and to reduce with decreasing
period (barrier width plus well width). A theory of these effects is
presented and is shown to give a good account of the phenomena.