THE EFFECT OF QUANTUM-WELLS ON THE MOBILITY OF ELECTRONS IN VERTICAL TRANSPORT

Authors
DANIELS ME BISHOP PJ RIDLEY BK
Citation
Me. Daniels et al., THE EFFECT OF QUANTUM-WELLS ON THE MOBILITY OF ELECTRONS IN VERTICAL TRANSPORT, Semiconductor science and technology, 12(4), 1997, pp. 375-379
Citations number
13
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
4
Year of publication
1997
Pages
375 - 379
Database
ISI
SICI code
0268-1242(1997)12:4<375:TEOQOT>2.0.ZU;2-0
Abstract
The mobility of electrons drifting in AlGaAs across GaAs quantum wells has been measured using the geometrical magnetoresistance (GMR) techn ique over the temperature range 77 to 300 K. The mobility is shown to be an oscillating function of well width and to reduce with decreasing period (barrier width plus well width). A theory of these effects is presented and is shown to give a good account of the phenomena.