MAGNETIC-FIELD-INDUCER CARRIER FREEZE-OUT IN NARROW-GAP SEMICONDUCTORS ANALYZED BY CAPACITANCE SPECTROSCOPY

Authors
LIU K CHU JH WU LJ CAI Y GUO SL OU HJ ZHENG GZ TANG DY
Citation
K. Liu et al., MAGNETIC-FIELD-INDUCER CARRIER FREEZE-OUT IN NARROW-GAP SEMICONDUCTORS ANALYZED BY CAPACITANCE SPECTROSCOPY, Semiconductor science and technology, 12(4), 1997, pp. 406-408
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
4
Year of publication
1997
Pages
406 - 408
Database
ISI
SICI code
0268-1242(1997)12:4<406:MCFINS>2.0.ZU;2-W
Abstract
Magnetocapacitance spectroscopy is introduced to study the magnetic-fi eld-induced carrier freeze-out in narrow-gap semiconductors (NGS). By using this experimental method the magnetic-field-induced carrier free ze-out in an n-type InSb sample has been investigated at 4.2 K in a ma gnetic field range from 0 to 7.0 T. With increasing magnetic field bet ween 2.0 T and 7.0 T, the activation energy of shallow donors in the s ample increased from about 1.0 meV to 2.7 meV. The experimental result s are compared with both theoretical and other experimental data. Good agreement is obtained between our experimental results and others, wh ile discrepancies still exist between the experiment and theory.