HETEROSTRUCTURE LASER-TRANSISTORS CONTROLLED BY RESONANT-TUNNELING ELECTRON EXTRACTION

Three-terminal laser-transistors with a quantum well active region and a resonant-tunnelling collector are proposed and considered. It is sh own that the laser-transistor is controlled by the collector voltage d ue to electron extraction via the resonant-tunnelling structure. The c urrent-voltage and light-voltage characteristics are calculated. Both of them reflect effective voltage control and possible bistable behavi our of the laser-transistor in a certain range of the collector voltag e. The electron heating due to electron injection and extraction can s ignificantly affect the controllability and bistability of the laser-t ransistor.