A MODEL FOR THE NON-STEADY-STATE TEMPERATURE BEHAVIOR OF THERMOELECTRIC COOLING SEMICONDUCTOR-DEVICES

Authors
TAYLOR PJ JESSER WA ROSI FD DERZKO Z
Citation
Pj. Taylor et al., A MODEL FOR THE NON-STEADY-STATE TEMPERATURE BEHAVIOR OF THERMOELECTRIC COOLING SEMICONDUCTOR-DEVICES, Semiconductor science and technology, 12(4), 1997, pp. 443-447
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
4
Year of publication
1997
Pages
443 - 447
Database
ISI
SICI code
0268-1242(1997)12:4<443:AMFTNT>2.0.ZU;2-6
Abstract
A simple, easily applied model describing the non-steady-state tempera ture behaviour of thermoelectric cooling semiconductor devices is deri ved from consideration of the heat flows arising from thermal conducti vity, the Peltier effect and Joule heating in a typical thermoelectric cooling device. The derived model is tested by comparison with the me asured performance of a thermoelectric cooling device constructed for this study. The model is shown to accurately predict device behaviour to a statistical confidence limit of 99% for the given device criteria and experimental conditions.