NEGATIVE-RESISTANCE OF ALGAAS DIODES CO-DOPED WITH SI AND MN

Authors
GHO SJ PARK SH LIM H CHOE BD LEE CW KO MK KIM YT
Citation
Sj. Gho et al., NEGATIVE-RESISTANCE OF ALGAAS DIODES CO-DOPED WITH SI AND MN, JPN J A P 2, 36(11B), 1997, pp. 1481-1482
Citations number
10
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
11B
Year of publication
1997
Pages
1481 - 1482
Database
ISI
SICI code
Abstract
The co-doping effects of Mn on AlGaAs:Si diodes grown by a single-step liquid phase epitaxy (LPE) technique are investigated. Their current- voltage (I-V) characteristics are studied as a function of Mn and Al c ompositions. It is found that the breakdown voltage and the voltage dr op increase with the concentrations of Mn and Al. These results are we ll explained by the increase of the thickness of the P-degrees-region and the decrease of free hole concentration in its region.