SELF FORMATION AND OPTICAL-PROPERTIES OF II-VI SEMICONDUCTOR WIRE STRUCTURES

Authors
ZHANG BP WANG WX YASUDA T LI YQ SEGAWA Y YAGUCHI H ONABE K EDAMATSU K ITOH T
Citation
Bp. Zhang et al., SELF FORMATION AND OPTICAL-PROPERTIES OF II-VI SEMICONDUCTOR WIRE STRUCTURES, JPN J A P 2, 36(11B), 1997, pp. 1490-1493
Citations number
16
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
36
Issue
11B
Year of publication
1997
Pages
1490 - 1493
Database
ISI
SICI code
Abstract
Based on simultaneous selective growth and composition modulation, Zn1 -xCdxSe wire structures are spontaneously formed on cleavage-induced G aAs (110) surfaces by deposition of a Zn1-yCdySe (x > y) alloy layer. The wire structures are formed on the top edge of the steps introduced by cleavage. These wires show a strongly polarized emission and a lar ge piezoelectric effect, implying a potential for applications in nonl inear optoelectronic devices. This paper discusses a novel approach to semiconductor nanostructures.