CALCULATED PHASE-DIAGRAMS FOR ACTIVATED LOW-PRESSURE DIAMOND GROWTH FROM C-H, C-O, AND C-H-O SYSTEMS

Citation
Jt. Wang et al., CALCULATED PHASE-DIAGRAMS FOR ACTIVATED LOW-PRESSURE DIAMOND GROWTH FROM C-H, C-O, AND C-H-O SYSTEMS, Journal of materials research, 12(12), 1997, pp. 3250-3253
Citations number
22
ISSN journal
08842914
Volume
12
Issue
12
Year of publication
1997
Pages
3250 - 3253
Database
ISI
SICI code
0884-2914(1997)12:12<3250:CPFALD>2.0.ZU;2-5
Abstract
Three-dimensional temperature (T)-pressure (P)-composition (X) phase d iagrams of binary carbon-hydrogen (C-H) and carbon-oxygen (C-O) system s for activated low pressure diamond growth have been calculated. Base d on an approximation of linear combination between C-H and C-O system s, a projective ternary carbon-hydrogen-oxygen (C-H-O) phase diagram h as also been obtained. There is always a diamond growth region in each of these phase diagrams. Once a supply of external activating energy stops, the diamond growth region will not exist. Nearly all of the rel iable experimental data reported in the Literature drop into the possi ble diamond growth region of the calculated projective ternary C-H-O p hase diagram under the conditions of 0.01-100 kPa and above 700 K.