INSIGHTS INTO THE ION-ASSISTED NUCLEATION OF DIAMOND ON SILICON

The ion-assisted nucleation of diamond was studied in a microwave plas ma chemical vapor deposition system to gain insights into the processe s controlling this phenomenon, The dependence of the nucleation densit y on bias voltage and temperature, as well as experiments with an elec trically isolated substrate, are consistent with an ion bombardment me chanism for diamond nucleation. However, the growth of these nuclei is dominated by neutral species rather than ions, Measurements of the bi as current under various conditions also provide details on the roles of the incident ion flux and substrate electron emission during this p rocess. Furthermore, Monte Carlo simulations of the ion energy distrib ution at the substrate are compared to experimental measurements, Pref erential sputtering, thermal spike, and carbon subplantation nucleatio n mechanisms are assessed based on the experimental and modeling resul ts.