AN IMPROVED ANALYSIS FOR THE DETERMINATION OF TRAP LEVELS IN SILICON FROM LASER MICROWAVE PHOTOCONDUCTIVE DECAY MEASUREMENTS

Dominant trap energy levels in silicon are extracted from the temperat ure dependence of minority carrier recombination lifetime, observed th rough laser microwave photoconductive decay. A small correction is mad e to the Arrhenius plot by incorporating the weakly temperature-depend ent term in the recombination lifetime expression, hitherto ignored. T he new extraction technique is simple to implement and the results are in good agreement with published data. (C) 1997 American Institute of Physics.