IMPROVEMENT OF LEAKAGE CURRENT CHARACTERISTICS OF BA0.5SR0.5TIO3 FILMS BY N2O PLASMA SURFACE-TREATMENT

Authors
CHO HJ OH SJ KANG CS HWANG CS LEE BT LEE KH HORII H LEE SI LEE MY
Citation
Hj. Cho et al., IMPROVEMENT OF LEAKAGE CURRENT CHARACTERISTICS OF BA0.5SR0.5TIO3 FILMS BY N2O PLASMA SURFACE-TREATMENT, Applied physics letters, 71(22), 1997, pp. 3221-3223
Citations number
6
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
22
Year of publication
1997
Pages
3221 - 3223
Database
ISI
SICI code
0003-6951(1997)71:22<3221:IOLCCO>2.0.ZU;2-7
Abstract
The effects of plasma surface treatment, using N2O gas, of Ba0.5Sr0.5T iO3 (BST) film on the leakage current characteristic of a Pt/BST/Pt ca pacitor were investigated. As a result of exposure of BST film to the plasma, the leakage current density of the BST capacitor decreased by two orders of magnitude in the high voltage region, and higher onset v oltage of an abrupt increase in leakage current was observed. The impr ovement of leakage properties of BST films can be attributed to the el imination of the bulged curve in the leakage current characteristics. Thermal desorption spectroscopy showed that the elimination was closel y related to the reduction of carbon content in the BST film. (C) 1997 American Institute of Physics.