CARBON-DOPED GAIN GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING NITROGEN AS THE CARRIER GAS/

Authors
HSU CC YANG YF OU HJ YANG ES LO HB
Citation
Cc. Hsu et al., CARBON-DOPED GAIN GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING NITROGEN AS THE CARRIER GAS/, Applied physics letters, 71(22), 1997, pp. 3248-3250
Citations number
5
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
22
Year of publication
1997
Pages
3248 - 3250
Database
ISI
SICI code
0003-6951(1997)71:22<3248:CGGHBG>2.0.ZU;2-2
Abstract
The use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojun ction bipolar transistors (HBTs) is reported, The material quality gro wn using a nitrogen carrier gas is the same as that of using a hydroge n carrier gas. High carbon doping and hole concentrations of 3 x 10(20 ) and 2 x 10(20) cm(-3) in GaAs were obtained. The fabricated HBTs sho wed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth. (C) 1997 American Institute o f Physics.