SHORT-WAVELENGTH PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN GA(AL)PGAP STAGGERED TYPE-II QUANTUM-WELLS/

Authors
GERHOLD M KAMATH K BHATTACHARYA P
Citation
M. Gerhold et al., SHORT-WAVELENGTH PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN GA(AL)PGAP STAGGERED TYPE-II QUANTUM-WELLS/, Applied physics letters, 71(22), 1997, pp. 3260-3262
Citations number
15
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
22
Year of publication
1997
Pages
3260 - 3262
Database
ISI
SICI code
0003-6951(1997)71:22<3260:SPAEIG>2.0.ZU;2-6
Abstract
Photoluminescence spectra of tailored Ga(AI)P/GaP quantum well heteros tructures exhibit strong short-wavelength peaks at 363, 560, and 600-7 00 nm, The peak at 560 nm seems to originate from a no-phonon transiti on. All the transitions are observed up to 200 K. Light emitting diode s made with the same heterostructure predominently emit 560 nm light ( green) with a background of 700 nm (red) at room temperature under cw operation. (C) 1997 American Institute of Physics.