IS THE ARSENIC INCORPORATION KINETICS IMPORTANT WHEN GROWING GAAS(001), GAAS(110), AND GAAS(111)A FILMS

The incorporation coefficients of As-2 and As-4, Obtained from reflect ion high-energy electron diffraction intensity oscillations in the As- limited growth regime, are compared for the growth of GaAs on (001), ( 110), and (111)A surfaces by molecular beam epitaxy, The kinetic resul ts are remarkably similar for (110) and (111)A, but very different fro m those obtained on (001). The incorporation coefficients decrease wit h increasing temperature for all three surfaces, with the effect being much more dramatic on (110) and (111) A. The low-and temperature-depe ndent incorporation coefficients on (110) and (111)A explain the need for high As:Ca flux ratios and low substrate temperatures in the prepa ration of high-quality GaAs epitaxial layers. (C) 1997 American Instit ute of Physics.