Optically pumped InAs/InGaSb/InAs/AlSb type-II quantum well lasers emi
tting from 4.1 to 4.36 mu m were operated up to 226 K with a character
istic temperature T-0 of 30 K. The absorbed threshold pump intensity a
t 0.98 mu m was 0.12 kW/cm(2) at 100 K, and 3.25 kW/cm(2) at 200 K wit
h a pulse length of 5 mu s and a repetition rate of 2 kHz. At 73 K, th
e peak output power was 250 mW per facet with a pulse length of 10 mu
s and a repetition rate of 10 kHz. A cw output power of 14.7 mW was ob
served at 74 K. (C) 1997 American Institute of Physics.