ADSORPTION AND DIFFUSION OF SI ADATOM ON HYDROGENATED SI(100) SURFACES

Authors
JEONG S OSHIYAMA A
Citation
S. Jeong et A. Oshiyama, ADSORPTION AND DIFFUSION OF SI ADATOM ON HYDROGENATED SI(100) SURFACES, Physical review letters, 79(22), 1997, pp. 4425-4428
Citations number
19
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
79
Issue
22
Year of publication
1997
Pages
4425 - 4428
Database
ISI
SICI code
0031-9007(1997)79:22<4425:AADOSA>2.0.ZU;2-D
Abstract
We present first-principles total-energy calculations which provide a detailed picture of adsorption and diffusion of a Si adatom on hydroge nated Si(100) surfaces. We find that the adatom spontaneously substitu tes for the H atom upon adsorption. We also find that the pathways and barriers of the adatom diffusion are sensitive to H coverage. Calcula ted results are consistent with H-induced variation in morphology of o verlayers observed in epitaxial growth.