STRUCTURAL AND ELECTRICAL-PROPERTIES OF LOW CONCENTRATION SNTE LAYERSAND PBTE SNTE HETEROSTRUCTURES GROWN BY MBE/

We analyse properties of thin SnTe layers and PbTe/SnTe heterostructur es grown by MBE on BaF2(111) substrates. Reflection high energy electr on diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high st ructural perfection of 0.6 mu m thick SnTe layers and (50 Angstrom PbT e)/(50 Angstrom SnTe) superlattices. The full width at half maximum va lues of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcse c; the carrier concentrations can be tuned from 5 x 10(19) cm(-3) to 1 0(21) cm(-3) depending on the MBE process parameters.