PHOTOINDUCED DEFECTS CREATION ON SULFUR PASSIVATED SURFACE OF GAAS

Authors
ZYTKIEWICZ ZR DOBACZEWSKI L GOMEZ D BRIONES F
Citation
Zr. Zytkiewicz et al., PHOTOINDUCED DEFECTS CREATION ON SULFUR PASSIVATED SURFACE OF GAAS, Acta Physica Polonica. A, 92(5), 1997, pp. 1083-1086
Citations number
10
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
92
Issue
5
Year of publication
1997
Pages
1083 - 1086
Database
ISI
SICI code
0587-4246(1997)92:5<1083:PDCOSP>2.0.ZU;2-8
Abstract
We report on photoinduced defect creation on the sulfurized (100) GaAs surface. The process manifests itself by unrecoverable temporal decre ase in the photoluminescence intensity of the GaAs surface treated by (NH4)(2)S-x solution. The results are discussed in terms of a photoind uced process of the As-Ga antisite generation on the sulfurized surfac e of GaAs.