ANISOTROPIC LATTICE MISFIT RELAXATION IN ALGAAS SEMI-BULK LAYERS GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY

Authors
ZYTKIEWICZ ZR DOMAGALA J BAKMISIUK J DOBOSZ D LESZCZYNSKI M
Citation
Zr. Zytkiewicz et al., ANISOTROPIC LATTICE MISFIT RELAXATION IN ALGAAS SEMI-BULK LAYERS GROWN ON GAAS SUBSTRATES BY LIQUID-PHASE ELECTROEPITAXY, Acta Physica Polonica. A, 92(5), 1997, pp. 1092-1096
Citations number
9
Journal title
Acta Physica Polonica. A → ACNP
ISSN journal
05874246
Volume
92
Issue
5
Year of publication
1997
Pages
1092 - 1096
Database
ISI
SICI code
0587-4246(1997)92:5<1092:ALMRIA>2.0.ZU;2-X
Abstract
Experimental evidence for unidirectional microcracking in semi-bulk Al GaAs layers grown on (001) GaAs substrates is presented. The asymmetri cal microcracking leads to anisotropic lattice misfit relaxation in th e AlGaAs/GaAs structure and is explained in terms of higher mobility o f [-110]-oriented alpha-type dislocations than that of beta-type dislo cations oriented in [110] direction.